DMG4N65CT vs DMG9N65CT

Product Attributes

Part Number DMG4N65CT DMG9N65CT
Manufacturer Diodes Incorporated Diodes Incorporated
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
DMG4N65CT DMG9N65CT
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc) 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 3Ohm @ 2A, 10V 1.3Ohm @ 4.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13.5 nC @ 10 V 39 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 900 pF @ 25 V 2310 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 2.19W (Ta) 165W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3