DMG6602SVTQ-7 vs DMG6602SVTX-7

Product Attributes

Part Number DMG6602SVTQ-7 DMG6602SVTX-7
Manufacturer Diodes Incorporated Diodes Incorporated
Category Transistors - FETs, MOSFETs - Arrays Transistors - FETs, MOSFETs - Arrays
DMG6602SVTQ-7 DMG6602SVTX-7
Product Status Active Active
FET Type N and P-Channel N and P-Channel Complementary
FET Feature Standard Standard
Drain to Source Voltage (Vdss) 30V 30V
Current - Continuous Drain (Id) @ 25°C 3.4A, 2.8A 3.4A (Ta), 2.8A (Ta)
Rds On (Max) @ Id, Vgs 60mOhm @ 3.1A, 10V 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250µA 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V 13nC @ 10V, 9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 15V 400pF @ 15V, 420pF @ 15V
Power - Max 840mW 840mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6
Supplier Device Package TSOT-26 TSOT-26