| Part Number | DMG3415UFY4Q-7 | DMG3415UFY4-7 |
|---|---|---|
| Manufacturer | Diodes Incorporated | Diodes Incorporated |
| Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
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| Product Status | Active | Obsolete |
| FET Type | P-Channel | P-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 16 V | 16 V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) | 2.5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 4A, 4.5V | 39mOhm @ 4A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4.5 V | 10 nC @ 4.5 V |
| Vgs (Max) | ±8V | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 282 pF @ 10 V | 281.9 pF @ 10 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 650mW (Ta) | 400mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Supplier Device Package | X2-DFN2015-3 | DFN2015H4-3 |
| Package / Case | 3-XDFN | 3-XFDFN |