DMG1012UW-7 vs DMG1012UWQ-7

Product Attributes

Part Number DMG1012UW-7 DMG1012UWQ-7
Manufacturer Diodes Incorporated Diodes Incorporated
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
DMG1012UW-7 DMG1012UWQ-7
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 1A (Ta) 950mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 450mOhm @ 600mA, 4.5V 450mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.74 nC @ 4.5 V 1 nC @ 4.5 V
Vgs (Max) ±6V ±6V
Input Capacitance (Ciss) (Max) @ Vds 60.67 pF @ 16 V 43 pF @ 16 V
FET Feature - -
Power Dissipation (Max) 290mW (Ta) 460mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-323 SOT-363
Package / Case SC-70, SOT-323 6-TSSOP, SC-88, SOT-363