DGTD65T40S2PT vs DGTD65T40S1PT

Product Attributes

Part Number DGTD65T40S2PT DGTD65T40S1PT
Manufacturer Diodes Incorporated Diodes Incorporated
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
DGTD65T40S2PT DGTD65T40S1PT
Product Status Last Time Buy Active
IGBT Type Field Stop Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V 650 V
Current - Collector (Ic) (Max) 80 A 80 A
Current - Collector Pulsed (Icm) 120 A 160 A
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 40A 2.4V @ 15V, 40A
Power - Max 230 W 341 W
Switching Energy 500µJ (on), 400µJ (off) 1.15mJ (on), 350µJ (off)
Input Type Standard Standard
Gate Charge 60 nC 219 nC
Td (on/off) @ 25°C 6ns/55ns 58ns/245ns
Test Condition 400V, 40A, 10Ohm, 15V 400V, 40A, 7.9Ohm, 15V
Reverse Recovery Time (trr) 60 ns 145 ns
Operating Temperature -40°C ~ 175°C (TJ) -40°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package TO-247 TO-247