DF11MR12W1M1B11BPSA1 vs DF11MR12W1M1PB11BPSA1

Product Attributes

Part Number DF11MR12W1M1B11BPSA1 DF11MR12W1M1PB11BPSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Arrays Transistors - FETs, MOSFETs - Arrays
DF11MR12W1M1B11BPSA1 DF11MR12W1M1PB11BPSA1
Product Status Last Time Buy Last Time Buy
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Silicon Carbide (SiC) Silicon Carbide (SiC)
Drain to Source Voltage (Vdss) 1200V (1.2kV) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 50A (Tj) 50A (Tj)
Rds On (Max) @ Id, Vgs 22.5mOhm @ 50A, 15V 22.5mOhm @ 50A, 15V
Vgs(th) (Max) @ Id 5.55V @ 20mA 5.55V @ 20mA
Gate Charge (Qg) (Max) @ Vgs 124nC @ 15V 124nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds 3680pF @ 800V 3680pF @ 800V
Power - Max 20mW 20mW
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount Chassis Mount
Package / Case Module Module
Supplier Device Package AG-EASY1BM-2 AG-EASY1B-2