DDTC114TE-7 vs DDTC113TE-7

Product Attributes

Part Number DDTC114TE-7 DDTC113TE-7
Manufacturer Diodes Incorporated Diodes Incorporated
Category Transistors - Bipolar (BJT) - Single, Pre-Biased Transistors - Bipolar (BJT) - Single, Pre-Biased
DDTC114TE-7 DDTC113TE-7
Product Status Active Active
Transistor Type NPN - Pre-Biased -
Current - Collector (Ic) (Max) 100 mA -
Voltage - Collector Emitter Breakdown (Max) 50 V -
Resistor - Base (R1) 10 kOhms -
Resistor - Emitter Base (R2) - -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA, 5V -
Vce Saturation (Max) @ Ib, Ic 300mV @ 100µA, 1mA -
Current - Collector Cutoff (Max) 500nA (ICBO) -
Frequency - Transition 250 MHz -
Power - Max 150 mW -
Mounting Type Surface Mount -
Package / Case SOT-523 -
Supplier Device Package SOT-523 -