CSD25301W1015 vs CSD25303W1015

Product Attributes

Part Number CSD25301W1015 CSD25303W1015
Manufacturer Texas Instruments Texas Instruments
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
CSD25301W1015 CSD25303W1015
Product Status Obsolete Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 2.2A (Tc) 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 75mOhm @ 1A, 4.5V 58mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2.5 nC @ 4.5 V 4.3 nC @ 4.5 V
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 270 pF @ 10 V 435 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 1.5W (Ta) 1.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 6-DSBGA (1x1.5) 6-DSBGA (1x1.5)
Package / Case 6-UFBGA, DSBGA 6-UFBGA, DSBGA