CSD23202W10T vs CSD23202W10

Product Attributes

Part Number CSD23202W10T CSD23202W10
Manufacturer Texas Instruments Texas Instruments
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
CSD23202W10T CSD23202W10
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V 12 V
Current - Continuous Drain (Id) @ 25°C 2.2A (Ta) 2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 53mOhm @ 500mA, 4.5V 53mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3.8 nC @ 4.5 V 3.8 nC @ 4.5 V
Vgs (Max) -6V -6V
Input Capacitance (Ciss) (Max) @ Vds 512 pF @ 6 V 512 pF @ 6 V
FET Feature - -
Power Dissipation (Max) 1W (Ta) 1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 4-DSBGA (1x1) 4-DSBGA (1x1)
Package / Case 4-UFBGA, DSBGA 4-UFBGA, DSBGA