CSD19538Q2 vs CSD19538Q2T

Product Attributes

Part Number CSD19538Q2 CSD19538Q2T
Manufacturer Texas Instruments Texas Instruments
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
CSD19538Q2 CSD19538Q2T
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 14.4A (Ta) 13.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 59mOhm @ 5A, 10V 59mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 3.8V @ 250µA 3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.6 nC @ 10 V 5.6 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 454 pF @ 50 V 454 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta), 20.2W (Tc) 2.5W (Ta), 20.2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 6-WSON (2x2) 6-WSON (2x2)
Package / Case 6-WDFN Exposed Pad 6-WDFN Exposed Pad