CSD19537Q3 vs CSD19537Q3T

Product Attributes

Part Number CSD19537Q3 CSD19537Q3T
Manufacturer Texas Instruments Texas Instruments
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
CSD19537Q3 CSD19537Q3T
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 50A (Ta) 50A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 14.5mOhm @ 10A, 10V 14.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3.6V @ 250µA 3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V 21 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1680 pF @ 50 V 1680 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 2.8W (Ta), 83W (Tc) 2.8W (Ta), 83W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-VSON (3.3x3.3) 8-VSON (3.3x3.3)
Package / Case 8-PowerVDFN 8-PowerVDFN