CSD19535KTTT vs CSD19536KTTT

Product Attributes

Part Number CSD19535KTTT CSD19536KTTT
Manufacturer Texas Instruments Texas Instruments
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
CSD19535KTTT CSD19536KTTT
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 200A (Ta) 200A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 3.4mOhm @ 100A, 10V 2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.4V @ 250µA 3.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 98 nC @ 10 V 153 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 7930 pF @ 50 V 12000 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 300W (Tc) 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DDPAK/TO-263-3 DDPAK/TO-263-3
Package / Case TO-263-4, D²Pak (3 Leads + Tab), TO-263AA TO-263-4, D²Pak (3 Leads + Tab), TO-263AA