CSD19536KCS vs CSD19531KCS

Product Attributes

Part Number CSD19536KCS CSD19531KCS
Manufacturer Texas Instruments Texas Instruments
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
CSD19536KCS CSD19531KCS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 150A (Ta) 100A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 2.7mOhm @ 100A, 10V 7.7mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 3.2V @ 250µA 3.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 153 nC @ 10 V 38 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 12000 pF @ 50 V 3870 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 375W (Tc) 214W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3