CSD13302WT vs CSD13306WT

Product Attributes

Part Number CSD13302WT CSD13306WT
Manufacturer Texas Instruments Texas Instruments
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
CSD13302WT CSD13306WT
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V 12 V
Current - Continuous Drain (Id) @ 25°C 1.6A (Ta) 3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 17.1mOhm @ 1A, 4.5V 10.2mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 1.3V @ 250µA 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.8 nC @ 4.5 V 11.2 nC @ 4.5 V
Vgs (Max) ±10V ±10V
Input Capacitance (Ciss) (Max) @ Vds 862 pF @ 6 V 1370 pF @ 6 V
FET Feature - -
Power Dissipation (Max) 1.8W (Ta) 1.9W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 4-DSBGA (1x1) 6-DSBGA (1x1.5)
Package / Case 4-UFBGA, DSBGA 6-UFBGA, DSBGA