BUZ32HXKSA1 vs BUZ31HXKSA1

Product Attributes

Part Number BUZ32HXKSA1 BUZ31HXKSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
BUZ32HXKSA1 BUZ31HXKSA1
Product Status Active Obsolete
FET Type - N-Channel
Technology - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 200 V
Current - Continuous Drain (Id) @ 25°C - 14.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 5V
Rds On (Max) @ Id, Vgs - 200mOhm @ 9A, 5V
Vgs(th) (Max) @ Id - 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) - ±20V
Input Capacitance (Ciss) (Max) @ Vds - 1120 pF @ 25 V
FET Feature - -
Power Dissipation (Max) - 95W (Tc)
Operating Temperature - -55°C ~ 150°C (TJ)
Mounting Type - Through Hole
Supplier Device Package - PG-TO220-3
Package / Case - TO-220-3