BUV27 vs BUV27G

Product Attributes

Part Number BUV27 BUV27G
Manufacturer STMicroelectronics onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
BUV27 BUV27G
Product Status Obsolete Obsolete
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 12 A 12 A
Voltage - Collector Emitter Breakdown (Max) 120 V 120 V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 800mA, 8A 1.5V @ 800mA, 8A
Current - Collector Cutoff (Max) - -
DC Current Gain (hFE) (Min) @ Ic, Vce - -
Power - Max 85 W 70 W
Frequency - Transition - -
Operating Temperature 175°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-220-3 TO-220-3
Supplier Device Package TO-220 TO-220