BUT11AI,127 vs BUT12AI,127

Product Attributes

Part Number BUT11AI,127 BUT12AI,127
Manufacturer NXP USA Inc. NXP USA Inc.
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
BUT11AI,127 BUT12AI,127
Product Status Obsolete Obsolete
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 5 A 8 A
Voltage - Collector Emitter Breakdown (Max) 450 V 450 V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 330mA, 2.5A 1.5V @ 860mA, 5A
Current - Collector Cutoff (Max) 1mA 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 14 @ 500mA, 5V 14 @ 1A, 5V
Power - Max 100 W 110 W
Frequency - Transition - -
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-220-3 TO-220-3
Supplier Device Package TO-220AB TO-220AB