BUK9Y12-100E,115 vs BUK9Y22-100E,115

Product Attributes

Part Number BUK9Y12-100E,115 BUK9Y22-100E,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
BUK9Y12-100E,115 BUK9Y22-100E,115
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 85A (Tc) 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V 5V
Rds On (Max) @ Id, Vgs 12mOhm @ 25A, 5V 21.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 5 V 35.8 nC @ 5 V
Vgs (Max) ±10V ±10V
Input Capacitance (Ciss) (Max) @ Vds 7973 pF @ 25 V 4640 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 238W (Tc) 147W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package LFPAK56, Power-SO8 LFPAK56, Power-SO8
Package / Case SC-100, SOT-669 SC-100, SOT-669