BUK9E1R9-40E,127 vs BUK9E1R8-40E,127

Product Attributes

Part Number BUK9E1R9-40E,127 BUK9E1R8-40E,127
Manufacturer NXP USA Inc. NXP USA Inc.
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
BUK9E1R9-40E,127 BUK9E1R8-40E,127
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 120A (Tj) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 5V, 10V
Rds On (Max) @ Id, Vgs - 1.7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id - 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - 120 nC @ 5 V
Vgs (Max) - ±10V
Input Capacitance (Ciss) (Max) @ Vds - 16400 pF @ 25 V
FET Feature - -
Power Dissipation (Max) - 349W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package I2PAK I2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA