Part Number | BUK9E08-55B,127 | BUK9E06-55B,127 |
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Manufacturer | NXP Semiconductors | Nexperia USA Inc. |
Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
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Product Status | Active | Obsolete |
FET Type | N-Channel | N-Channel |
Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55 V | 55 V |
Current - Continuous Drain (Id) @ 25°C | 75A (Tc) | 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 7mOhm @ 25A, 10V | 5.4mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id | 2V @ 1mA | 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 5 V | 60 nC @ 5 V |
Vgs (Max) | ±15V | ±15V |
Input Capacitance (Ciss) (Max) @ Vds | 5280 pF @ 25 V | 7565 pF @ 25 V |
FET Feature | - | - |
Power Dissipation (Max) | 203W (Tc) | 258W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole | Through Hole |
Supplier Device Package | I2PAK | I2PAK |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA |