BUK6607-55C,118 vs BUK6607-75C,118

Product Attributes

Part Number BUK6607-55C,118 BUK6607-75C,118
Manufacturer Nexperia USA Inc. NXP USA Inc.
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
BUK6607-55C,118 BUK6607-75C,118
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 75 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 6.5mOhm @ 25A, 10V 7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.8V @ 1mA 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 82 nC @ 10 V 123 nC @ 10 V
Vgs (Max) ±16V ±16V
Input Capacitance (Ciss) (Max) @ Vds 5160 pF @ 25 V 7600 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 158W (Tc) 204W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB