| Part Number | BUK653R2-55C,127 | BUK653R5-55C,127 |
|---|---|---|
| Manufacturer | NXP USA Inc. | NXP USA Inc. |
| Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
|
|
|
| Product Status | Obsolete | Obsolete |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55 V | 55 V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) | 120A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 25A, 10V | 3.9mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA | 2.8V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 258 nC @ 10 V | 191 nC @ 10 V |
| Vgs (Max) | ±16V | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds | 15300 pF @ 25 V | 11516 pF @ 25 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 306W (Tc) | 263W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Supplier Device Package | TO-220AB | TO-220AB |
| Package / Case | TO-220-3 | TO-220-3 |