| Part Number | BUK652R6-40C,127 | BUK652R3-40C,127 | 
|---|---|---|
| Manufacturer | NXP USA Inc. | NXP USA Inc. | 
| Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single | 
|   |   | |
| Product Status | Obsolete | Obsolete | 
| FET Type | N-Channel | N-Channel | 
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | 
| Drain to Source Voltage (Vdss) | 40 V | 40 V | 
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) | 120A (Tc) | 
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 
| Rds On (Max) @ Id, Vgs | 2.7mOhm @ 25A, 10V | 2.3mOhm @ 25A, 10V | 
| Vgs(th) (Max) @ Id | 2.8V @ 1mA | 2.8V @ 1mA | 
| Gate Charge (Qg) (Max) @ Vgs | 199 nC @ 10 V | 260 nC @ 10 V | 
| Vgs (Max) | ±16V | ±16V | 
| Input Capacitance (Ciss) (Max) @ Vds | 11334 pF @ 25 V | 15100 pF @ 25 V | 
| FET Feature | - | - | 
| Power Dissipation (Max) | 263W (Tc) | 306W (Tc) | 
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | 
| Mounting Type | Through Hole | Through Hole | 
| Supplier Device Package | TO-220AB | TO-220AB | 
| Package / Case | TO-220-3 | TO-220-3 |