BUJD103AD,118 vs BUJD105AD,118

Product Attributes

Part Number BUJD103AD,118 BUJD105AD,118
Manufacturer NXP USA Inc. WeEn Semiconductors
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
BUJD103AD,118 BUJD105AD,118
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 4 A 8 A
Voltage - Collector Emitter Breakdown (Max) 400 V 400 V
Vce Saturation (Max) @ Ib, Ic 1V @ 1A, 4A 1V @ 800mA, 4A
Current - Collector Cutoff (Max) 100µA 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce 11 @ 2A, 5V 13 @ 500mA, 5V
Power - Max 80 W 80 W
Frequency - Transition - -
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK DPAK