BUJ302AD,118 vs BUJ303AD,118

Product Attributes

Part Number BUJ302AD,118 BUJ303AD,118
Manufacturer NXP USA Inc. WeEn Semiconductors
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
BUJ302AD,118 BUJ303AD,118
Product Status Active Active
Transistor Type NPN -
Current - Collector (Ic) (Max) 4 A -
Voltage - Collector Emitter Breakdown (Max) 400 V -
Vce Saturation (Max) @ Ib, Ic 1.5V @ 1A, 3.5A -
Current - Collector Cutoff (Max) 250mA -
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 800mA, 3V -
Power - Max 80 W -
Frequency - Transition - -
Operating Temperature 150°C (TJ) -
Mounting Type Surface Mount -
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 -
Supplier Device Package DPAK -