BUJ303A,127 vs BUJ302A,127

Product Attributes

Part Number BUJ303A,127 BUJ302A,127
Manufacturer WeEn Semiconductors NXP USA Inc.
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
BUJ303A,127 BUJ302A,127
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 5 A 4 A
Voltage - Collector Emitter Breakdown (Max) 500 V 400 V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 600mA, 3A 1.5V @ 1A, 3.5A
Current - Collector Cutoff (Max) 100µA 250mA
DC Current Gain (hFE) (Min) @ Ic, Vce 14 @ 500mA, 5V 25 @ 800mA, 3V
Power - Max 100 W 80 W
Frequency - Transition - -
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-220-3 TO-220-3
Supplier Device Package TO-220AB TO-220AB