BUJ106A,127 vs BUJ105A,127

Product Attributes

Part Number BUJ106A,127 BUJ105A,127
Manufacturer NXP USA Inc. WeEn Semiconductors
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
BUJ106A,127 BUJ105A,127
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 10 A 8 A
Voltage - Collector Emitter Breakdown (Max) 400 V 400 V
Vce Saturation (Max) @ Ib, Ic 1V @ 1.2A, 6A 1V @ 800mA, 4A
Current - Collector Cutoff (Max) 100µA 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce 14 @ 500mA, 5V 13 @ 500mA, 5V
Power - Max 80 W 80 W
Frequency - Transition - -
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-220-3 TO-220-3
Supplier Device Package TO-220AB TO-220AB