BUH51 vs BUH51G

Product Attributes

Part Number BUH51 BUH51G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
BUH51 BUH51G
Product Status Obsolete Obsolete
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 3 A 3 A
Voltage - Collector Emitter Breakdown (Max) 500 V 500 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 1A 500mV @ 200mA, 1A
Current - Collector Cutoff (Max) 100µA 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce 8 @ 1A, 1V 8 @ 1A, 1V
Power - Max 50 W 50 W
Frequency - Transition 23MHz 23MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package TO-126 TO-126