BTS282ZE3180AATMA2 vs BTS282ZE3180AATMA1

Product Attributes

Part Number BTS282ZE3180AATMA2 BTS282ZE3180AATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
BTS282ZE3180AATMA2 BTS282ZE3180AATMA1
Product Status Not For New Designs Active
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 49 V -
Current - Continuous Drain (Id) @ 25°C 80A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V -
Rds On (Max) @ Id, Vgs 6.5mOhm @ 36A, 10V -
Vgs(th) (Max) @ Id 2V @ 240µA -
Gate Charge (Qg) (Max) @ Vgs 232 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 4800 pF @ 25 V -
FET Feature Temperature Sensing Diode -
Power Dissipation (Max) 300W (Tc) -
Operating Temperature -40°C ~ 175°C (TJ) -
Mounting Type Surface Mount -
Supplier Device Package PG-TO263-7-1 -
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA -