BTS244ZE3062AATMA1 vs BTS244ZE3062AATMA2

Product Attributes

Part Number BTS244ZE3062AATMA1 BTS244ZE3062AATMA2
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
BTS244ZE3062AATMA1 BTS244ZE3062AATMA2
Product Status Obsolete Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc) 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 13mOhm @ 19A, 10V 13mOhm @ 19A, 10V
Vgs(th) (Max) @ Id 2V @ 130µA 2V @ 130µA
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V 130 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2660 pF @ 25 V 2660 pF @ 25 V
FET Feature - Temperature Sensing Diode
Power Dissipation (Max) 170W (Tc) 170W (Tc)
Operating Temperature -40°C ~ 175°C (TJ) -40°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-5-2 PG-TO263-5-2
Package / Case TO-263-5, D²Pak (4 Leads + Tab), TO-263BB TO-263-5, D²Pak (4 Leads + Tab), TO-263BB