| Part Number | BSZ0910LSATMA1 | BSZ0911LSATMA1 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
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| Product Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta), 40A (Tc) | 12A (Ta), 40A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 30A, 10V | 7mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V | 10 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 15 V | 670 pF @ 15 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 2.1W (Ta), 37W (Tc) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TDSON-8 FL | PG-TDSON-8 FL |
| Package / Case | 8-PowerTDFN | 8-PowerTDFN |