BSZ0909NSATMA1 vs BSZ0901NSATMA1

Product Attributes

Part Number BSZ0909NSATMA1 BSZ0901NSATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
BSZ0909NSATMA1 BSZ0901NSATMA1
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 34 V 30 V
Current - Continuous Drain (Id) @ 25°C 9A (Ta), 36A (Tc) 22A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 12mOhm @ 20A, 10V 2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V 45 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1310 pF @ 15 V 2850 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 2.1W (Ta), 25W (Tc) 2.1W (Ta), 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TSDSON-8 PG-TSDSON-8
Package / Case 8-PowerTDFN 8-PowerTDFN