BSZ086P03NS3EGATMA1 vs BSZ086P03NS3GATMA1

Product Attributes

Part Number BSZ086P03NS3EGATMA1 BSZ086P03NS3GATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
BSZ086P03NS3EGATMA1 BSZ086P03NS3GATMA1
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 13.5A (Ta), 40A (Tc) 13.5A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 8.6mOhm @ 20A, 10V 8.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.1V @ 105µA 3.1V @ 105µA
Gate Charge (Qg) (Max) @ Vgs 57.5 nC @ 10 V 57.5 nC @ 10 V
Vgs (Max) ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 4785 pF @ 15 V 4785 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 2.1W (Ta), 69W (Tc) 2.1W (Ta), 69W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TSDSON-8 PG-TSDSON-8
Package / Case 8-PowerTDFN 8-PowerTDFN