BSZ0703LSATMA1 vs BSZ0803LSATMA1

Product Attributes

Part Number BSZ0703LSATMA1 BSZ0803LSATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
BSZ0703LSATMA1 BSZ0803LSATMA1
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 100 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc) 9A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.5mOhm @ 20A, 10V 14.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.3V @ 20µA 2.3V @ 23µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 4.5 V 15 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 30 V 1300 pF @ 50 V
FET Feature Standard -
Power Dissipation (Max) 46W (Tc) 2.1W (Ta), 52W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TSDSON-8-26 PG-TDSON-8 FL
Package / Case 8-PowerTDFN 8-PowerTDFN