BSZ028N04LSATMA1 vs BSZ025N04LSATMA1

Product Attributes

Part Number BSZ028N04LSATMA1 BSZ025N04LSATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
BSZ028N04LSATMA1 BSZ025N04LSATMA1
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 21A (Ta), 40A (Tc) 22A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.8mOhm @ 20A, 10V 2.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id - 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V 52 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2300 pF @ 20 V 3680 pF @ 20 V
FET Feature - -
Power Dissipation (Max) 2.1W (Ta), 63W (Tc) 2.1W (Ta), 69W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TSDSON-8-FL PG-TSDSON-8-FL
Package / Case 8-PowerTDFN 8-PowerTDFN