| Part Number | BSZ018NE2LSIATMA1 | BSZ018NE2LSATMA1 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
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| Product Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 25 V | 25 V |
| Current - Continuous Drain (Id) @ 25°C | 22A (Ta), 40A (Tc) | 23A (Ta), 40A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 1.8mOhm @ 20A, 10V | 1.8mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V | 39 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 12 V | 2800 pF @ 12 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 2.1W (Ta), 69W (Tc) | 2.1W (Ta), 69W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TSDSON-8-FL | PG-TSDSON-8-FL |
| Package / Case | 8-PowerTDFN | 8-PowerTDFN |