BSS64LT1G vs BSS63LT1G

Product Attributes

Part Number BSS64LT1G BSS63LT1G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
BSS64LT1G BSS63LT1G
Product Status Active Active
Transistor Type NPN PNP
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 80 V 100 V
Vce Saturation (Max) @ Ib, Ic 200mV @ 15mA, 50mA 250mV @ 2.5mA, 25mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 10mA, 1V 30 @ 25mA, 1V
Power - Max 225 mW 225 mW
Frequency - Transition 60MHz 95MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236)