BSP88L6327 vs BSP88E6327

Product Attributes

Part Number BSP88L6327 BSP88E6327
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
BSP88L6327 BSP88E6327
Product Status Active Obsolete
FET Type - N-Channel
Technology - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 240 V
Current - Continuous Drain (Id) @ 25°C - 350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) - 2.8V, 4.5V
Rds On (Max) @ Id, Vgs - 6Ohm @ 350mA, 10V
Vgs(th) (Max) @ Id - 1.4V @ 108µA
Gate Charge (Qg) (Max) @ Vgs - 6.8 nC @ 10 V
Vgs (Max) - ±20V
Input Capacitance (Ciss) (Max) @ Vds - 95 pF @ 25 V
FET Feature - -
Power Dissipation (Max) - 1.7W (Ta)
Operating Temperature - -55°C ~ 150°C (TJ)
Mounting Type - Surface Mount
Supplier Device Package - PG-SOT223-4
Package / Case - TO-261-4, TO-261AA