| Part Number | BSP52H6327XTSA1 | BSP62H6327XTSA1 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Category | Transistors - Bipolar (BJT) - Single | Transistors - Bipolar (BJT) - Single |
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| Product Status | Not For New Designs | Not For New Designs |
| Transistor Type | NPN - Darlington | PNP - Darlington |
| Current - Collector (Ic) (Max) | 1 A | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V | 80 V |
| Vce Saturation (Max) @ Ib, Ic | 1.8V @ 1mA, 1A | 1.8V @ 1mA, 1A |
| Current - Collector Cutoff (Max) | 10µA | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 500mA, 10V | 2000 @ 500mA, 10V |
| Power - Max | 1.5 W | 1.5 W |
| Frequency - Transition | 200MHz | 200MHz |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | TO-261-4, TO-261AA | TO-261-4, TO-261AA |
| Supplier Device Package | PG-SOT223-4 | PG-SOT223-4 |