BSP613PH6327XTSA1 vs BSP612PH6327XTSA1

Product Attributes

Part Number BSP613PH6327XTSA1 BSP612PH6327XTSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
BSP613PH6327XTSA1 BSP612PH6327XTSA1
Product Status Active Obsolete
FET Type P-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 60 V -
Current - Continuous Drain (Id) @ 25°C 2.9A (Ta) 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 130mOhm @ 2.9A, 10V -
Vgs(th) (Max) @ Id 4V @ 1mA -
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 875 pF @ 25 V -
FET Feature - -
Power Dissipation (Max) 1.8W (Ta) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
Supplier Device Package PG-SOT223-4 -
Package / Case TO-261-4, TO-261AA -