| Part Number | BSP60E6327 | BSP61E6327 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Category | Transistors - Bipolar (BJT) - Single | Transistors - Bipolar (BJT) - Single |
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| Product Status | Active | Active |
| Transistor Type | PNP - Darlington | - |
| Current - Collector (Ic) (Max) | 1 A | - |
| Voltage - Collector Emitter Breakdown (Max) | 45 V | - |
| Vce Saturation (Max) @ Ib, Ic | 1.8V @ 1mA, 1A | - |
| Current - Collector Cutoff (Max) | 10µA | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 500mA, 10V | - |
| Power - Max | 1.5 W | - |
| Frequency - Transition | 200MHz | - |
| Operating Temperature | 150°C (TJ) | - |
| Mounting Type | Surface Mount | - |
| Package / Case | TO-261-4, TO-261AA | - |
| Supplier Device Package | PG-SOT223-4-21 | - |