BSP52T1G vs BSP52T3G

Product Attributes

Part Number BSP52T1G BSP52T3G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
BSP52T1G BSP52T3G
Product Status Active Active
Transistor Type NPN - Darlington NPN - Darlington
Current - Collector (Ic) (Max) 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 1.3V @ 500µA, 500mA 1.3V @ 500µA, 500mA
Current - Collector Cutoff (Max) 10µA 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 500mA, 10V 2000 @ 500mA, 10V
Power - Max 800 mW 800 mW
Frequency - Transition - -
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SOT-223 (TO-261) SOT-223 (TO-261)