BSP321PH6327XTSA1 vs BSP322PH6327XTSA1

Product Attributes

Part Number BSP321PH6327XTSA1 BSP322PH6327XTSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
BSP321PH6327XTSA1 BSP322PH6327XTSA1
Product Status Not For New Designs Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 980mA (Tc) 1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 900mOhm @ 980mA, 10V 800mOhm @ 1A, 10V
Vgs(th) (Max) @ Id 4V @ 380µA 1V @ 380µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V 16.5 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 319 pF @ 25 V 372 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1.8W (Ta) 1.8W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-SOT223-4 PG-SOT223-4
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA