BSP315PE6327T vs BSP316PE6327T

Product Attributes

Part Number BSP315PE6327T BSP316PE6327T
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
BSP315PE6327T BSP316PE6327T
Product Status Obsolete Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 100 V
Current - Continuous Drain (Id) @ 25°C 1.17A (Ta) 680mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 800mOhm @ 1.17A, 10V 1.8Ohm @ 680mA, 10V
Vgs(th) (Max) @ Id 2V @ 160µA 2V @ 170µA
Gate Charge (Qg) (Max) @ Vgs 7.8 nC @ 10 V 6.4 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 160 pF @ 25 V 146 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1.8W (Ta) 1.8W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-SOT223-4 PG-SOT223-4
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA