BSP220,115 vs BSP225,115

Product Attributes

Part Number BSP220,115 BSP225,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
BSP220,115 BSP225,115
Product Status Active Not For New Designs
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 250 V
Current - Continuous Drain (Id) @ 25°C 225mA (Ta) 225mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 12Ohm @ 200mA, 10V 15Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id 2.8V @ 1mA 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 90 pF @ 25 V 90 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1.5W (Ta) 1.5W (Ta)
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-223 SOT-223
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA