BSP129L6327 vs BSP125L6327

Product Attributes

Part Number BSP129L6327 BSP125L6327
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
BSP129L6327 BSP125L6327
Product Status Active Active
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 240 V -
Current - Continuous Drain (Id) @ 25°C 350mA (Ta) -
Drive Voltage (Max Rds On, Min Rds On) 0V, 10V -
Rds On (Max) @ Id, Vgs 6Ohm @ 350mA, 10V -
Vgs(th) (Max) @ Id 1V @ 108µA -
Gate Charge (Qg) (Max) @ Vgs 5.7 nC @ 5 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 108 pF @ 25 V -
FET Feature Depletion Mode -
Power Dissipation (Max) 1.8W (Ta) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
Supplier Device Package PG-SOT223-4 -
Package / Case TO-261-4, TO-261AA -