BSP125H6327XTSA1 vs BSP129H6327XTSA1

Product Attributes

Part Number BSP125H6327XTSA1 BSP129H6327XTSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
BSP125H6327XTSA1 BSP129H6327XTSA1
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 240 V
Current - Continuous Drain (Id) @ 25°C 120mA (Ta) 350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 0V, 10V
Rds On (Max) @ Id, Vgs 45Ohm @ 120mA, 10V 6Ohm @ 350mA, 10V
Vgs(th) (Max) @ Id 2.3V @ 94µA 1V @ 108µA
Gate Charge (Qg) (Max) @ Vgs 6.6 nC @ 10 V 5.7 nC @ 5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 150 pF @ 25 V 108 pF @ 25 V
FET Feature - Depletion Mode
Power Dissipation (Max) 1.8W (Ta) 1.8W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-SOT223-4 PG-SOT223-4
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA