BSH112,235 vs BSH111,235

Product Attributes

Part Number BSH112,235 BSH111,235
Manufacturer NXP USA Inc. Nexperia USA Inc.
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
BSH112,235 BSH111,235
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 55 V
Current - Continuous Drain (Id) @ 25°C 300mA (Ta) 335mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V 4Ohm @ 500mA, 4.5V
Vgs(th) (Max) @ Id 2V @ 1mA 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - 1 nC @ 8 V
Vgs (Max) ±15V ±10V
Input Capacitance (Ciss) (Max) @ Vds 40 pF @ 10 V 40 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 830mW (Tc) 830mW (Tc)
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23 (TO-236AB) TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3