BSH105,215 vs BSH108,215

Product Attributes

Part Number BSH105,215 BSH108,215
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
BSH105,215 BSH108,215
Product Status Not For New Designs Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 30 V
Current - Continuous Drain (Id) @ 25°C 1.05A (Ta) 1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 5V, 10V
Rds On (Max) @ Id, Vgs 200mOhm @ 600mA, 4.5V 120mOhm @ 1A, 10V
Vgs(th) (Max) @ Id 570mV @ 1mA (Typ) 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 3.9 nC @ 4.5 V 10 nC @ 10 V
Vgs (Max) ±8V ±20V
Input Capacitance (Ciss) (Max) @ Vds 152 pF @ 16 V 190 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 417mW (Ta) 830mW (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3