| Part Number | BSG0810NDIATMA1 | BSG0813NDIATMA1 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Category | Transistors - FETs, MOSFETs - Arrays | Transistors - FETs, MOSFETs - Arrays |
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| Product Status | Active | Active |
| FET Type | 2 N-Channel (Dual) Asymmetrical | 2 N-Channel (Dual) Asymmetrical |
| FET Feature | Logic Level Gate, 4.5V Drive | Logic Level Gate, 4.5V Drive |
| Drain to Source Voltage (Vdss) | 25V | 25V |
| Current - Continuous Drain (Id) @ 25°C | 19A, 39A | 19A, 33A |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 20A, 10V | 3mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 8.4nC @ 4.5V | 8.4nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1040pF @ 12V | 1100pF @ 12V |
| Power - Max | 2.5W | 2.5W |
| Operating Temperature | -55°C ~ 155°C (TJ) | -55°C ~ 155°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | 8-PowerTDFN | 8-PowerTDFN |
| Supplier Device Package | PG-TISON-8 | PG-TISON-8 |